APTSM120AM55CT1AG APTSM120AM55CT1AG C rev 2 july, 2015 www.microsemi.com 1 C 8 pins 1/2 ; 3/4 ; 5/6 must be shorted together all ratings @ t j = 25c unless otherwise specified absolute maximum ratings (per sic mosfet) these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source voltage 1200 v i d continuous drain current t c = 25c 74 a t c = 80c 59 i dm pulsed drain current 140 v gs gate - source voltage -10/+25 v r dson drain - source on resistance 50 m p d power dissipation t c = 25c 470 w application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? sic power mosfet - low r ds(on) - high temperature performance ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? very low stray inductance ? internal thermistor for temperature monitoring ? kelvin source for easy drive ? aln substrate for improved thermal performance benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant phase leg s ic mosfet power modul e v dss = 1200v r dson = 50m max @ tj = 25c i d = 74a @ tc = 25c downloaded from: http:///
APTSM120AM55CT1AG APTSM120AM55CT1AG C rev 2 july, 2015 www.microsemi.com 2 C 8 electrical characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v ; v ds = 1200v 20 200 a r ds(on) drain C source on resistance v gs = 20v i d = 40a t j = 25c 40 50 m t j = 175c 70 v gs ( th ) gate threshold voltage v gs = v ds , i d = 2ma 1.7 3 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 200 na dynamic characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 1000v f = 1mhz 5120 pf c oss output capacitance 240 c rss reverse transfer capacitance 40 q g total gate charge v gs = -5/20v v bus = 600v i d = 40a 272 nc q gs gate C source charge 80 q gd gate C drain charge 80 t d(on) turn-on delay time v gs = -5/+20v v bus = 800v i d = 40a r gext = 2.5 10 ns t r rise time 10 t d(off) turn-off delay time 45 t f fall time 30 e on turn on energy inductive switching v gs = -5/+20v v bus = 600v i d = 40a r gext = 2.5 t j = 150c 0.9 mj e off turn off energy t j = 150c 0.5 mj r gint internal gate resistance 1.65 r thjc junction to case thermal resistance 0.32 c/w body diode ratings and characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit v sd diode forward voltage v gs = 0v, i sd = 40a 3.9 v t rr reverse recovery time i sd = 40a ; v gs = -2v v r = 800v ; di f /dt = 200a/s 140 ns q rr reverse recovery charge 230 nc i rr reverse recovery current 4 a downloaded from: http:///
APTSM120AM55CT1AG APTSM120AM55CT1AG C rev 2 july, 2015 www.microsemi.com 3 C 8 sic diode characteristics (per sic diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 1200 v i rm reverse leakage current v r =1200v t j = 25c 20 400 a t j = 175c 1000 i f dc forward current tc = 125c 20 a v f diode forward voltage i f = 20a t j = 25c 1.5 1.8 v t j = 175c 2.3 q c total capacitive charge i f = 20a, v r = 600v di/dt = 1000a/s 240 nc c total capacitance f = 1mhz, v r = 200v 230 pf f = 1mhz, v r = 400v 170 r thjc junction to case thermal resistance 0.55 c/w temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 125 torque mounting torque to heatsink m4 2 3 n.m wt package weight 80 g t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTSM120AM55CT1AG APTSM120AM55CT1AG C rev 2 july, 2015 www.microsemi.com 4 C 8 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com downloaded from: http:///
APTSM120AM55CT1AG APTSM120AM55CT1AG C rev 2 july, 2015 www.microsemi.com 5 C 8 typical sic mosfet performance curve v gs =15v v gs =18v v gs =20v 0 20 40 60 80 01234567 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =25c v gs =20v v gs =15v v gs =18v 0 20 40 60 80 01234567 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =175c 0.75 1 1.25 1.5 1.75 25 50 75 100 125 150 175 t j , junction temperature (c) norm alized r ds(on) vs. tem perature r dson , drain source on resistance v gs =20v i d =40a t j =175c t j =25c t j =25c 0 20 40 60 80 2468101214 i ds , drain source current (a) v gs , gate source voltage (v) transfert characteristics d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maxim um effective transient thermal im pedance, junction to case vs pulse duration eon eof f 0.0 0.5 1.0 1.5 2.0 0 2 04 06 08 0 sw itching energy (m j) drain current (a) inductive switching energy vs current v gs =-5/20v r g = 2.5 ? v bus = 600v t j = 150c eon eof f 0.25 0.50 0.75 1.00 1.25 2.533.544.555.566.577.5 sw itching energy (m j) gate resistance (ohms) inductive switching energy vs rg v gs =-5/20v i d = 40a v bus = 600v t j = 150c downloaded from: http:///
APTSM120AM55CT1AG APTSM120AM55CT1AG C rev 2 july, 2015 www.microsemi.com 6 C 8 cis s cr s s cos s 0.01 0.1 1 10 100 0 200 400 600 800 1000 c, capacitance (nf) v ds , drain source voltage (v) capacitance vs drain source voltage zcs hard switching zvs 0 100 200 300 400 500 600 700 20 30 40 50 60 70 80 fr e que ncy (khz ) i d , drain current (a) operating frequency vs drain current v bus =600v d=50% r g =2.5 ? t j =150c t c =75c v gs =-5v v gs =-2v v gs =0v -80 -60 -40 -20 0 -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 i ds , drain source current (a) v ds , drain source voltage (v) body diode characteristics t j =25c v gs =5v v gs =0v v gs =15v v gs =18v v gs =20v -80 -60 -40 -20 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 i ds , drain source current (a) v ds , drain source voltage (v) 3rd quadrant characteristics t j =25c v gs =-5v v gs =-2v v gs =0v -80 -60 -40 -20 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 i ds , drain source current (a) v ds , drain source voltage (v) body diode characteristics t j =175c v gs =5v v gs =0v v gs =15v v gs =18v v gs =20v -80 -60 -40 -20 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 i ds , drain source current (a) v ds , drain source voltage (v) 3rd quadrant characteristics t j =175c -5 0 5 10 15 20 0 40 80 120 160 200 240 280 v gs , gate source voltage (v) gate charge (nc) gate charge vs gate source voltage i d = 40a v ds = 600v downloaded from: http:///
APTSM120AM55CT1AG APTSM120AM55CT1AG C rev 2 july, 2015 www.microsemi.com 7 C 8 typical sic diode performance curve d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance ( c/w) rectangular pulse duration (seconds) maxim um effective transient thermal im pedance, junction to case vs pulse duratio n t j =25c t j =125c t j =175c 0 10 20 30 40 0 0.5 1 1.5 2 2.5 3 3.5 4 i f for w ar d cur rent ( a) v f forw ard voltage (v) forw ard characteristics t j =25c t j =125c t j =175c 0 0.2 0.4 0.6 0.8 400 600 800 1000 1200 1400 i r reverse current (ma) v r reverse voltage (v) reverse characteristics downloaded from: http:///
APTSM120AM55CT1AG APTSM120AM55CT1AG C rev 2 july, 2015 www.microsemi.com 8 C 8 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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